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Ships within 48 hours · Estimated delivery Aug 8 - Aug 13
M471B5273DH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration 36-chip 2048Mx4 Pieces in Kit 2 Compatibility
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 288-pin EUDIMM Ranks Single rank Configuration 9 Chip 512M x8 Pieces in Kit 2 Compatibility
This 4GB (2x 2GB) DDR3 1066 MT/s Dual rank
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (2x 4GB) DDR3 1600 MT/s 240-pin RDIMM RAM kit from Samsung
Samsung 32GB (1x 32GB) DDR4-2666 PC4-21300 1.2V DR x4 ECC Registered 288-pin RDIMM RAM Module Classification_ram-ddr4-2400-eudimm-8gb-1x-dr-fm M471B5273DH0-CH9 Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR4 2666 MT s 288 pin RDIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V and is
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