Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.35V SR x8 240-pin UDIMM RAM Module Ranks_Dual but the effective rate is

but the effective rate is 800 megatransfers per second (MT/s) because there are 400 million rising edges per second and 400 million falling edges per second of a clock signal running at 400 MHz

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 2 Compatibility

This 512MB (1x 512MB) DDR 266 MT/s Dual rank

NT2GC64B88B0NS-CG Capacity 2GB (1x 2GB) Brand Nanya Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

x8 configuration RAM kit from Ramcity is for use in DDR4 compatible systems and operates at 2133 MT/s with an overall transfer rate of PC4-17000

Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.35V SR x8 240-pin UDIMM RAM Module Ranks_Dual but the effective rate isProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s Single rank, x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 35V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical